Memory component, memory device, and method of operating memory device
AssigneeSony Semiconductor Solutions Corporation
InventorsKazuhiro Ohba, Shuichiro Yasuda, Tetsuya Mizuguchi, Katsuhisa Aratani, Masayuki Shimuta, Akira Kouchiyama, Mayumi Ogasawara
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Abstract
A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.
Claims12
A memory device comprising:
- a first electrode;
- a second electrode;
- and
- a memory layer between the first and second electrodes,
- wherein,
- the memory layer includes (a) a first memory layer an ion source material, and (b) a second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and a transition metal oxide, a transition metal oxynitride, or both,
- the first memory layer has a first sub layer comprising aluminum, a chalcogen element and a transition metal element, and a second sublayer comprising aluminum and a chalcogen element, the second sublayer of the first memory layer being between the second memory layer and the first sublayer of the first memory layer,
- the second memory layer has a first sublayer made of at least one of a transition metal oxide or a transition metal oxynitride and a second sublayer containing the aluminum oxide as its main component, the second sublayer being between the first sublayer and the first electrode, and
- the aluminum oxide and the transition metal oxide, the transition metal oxynitride, or both are present in the first sub layer of the second memory layer in a mixed state.
A memory device comprising:
- a first electrode;
- a second electrode;
- and
- a memory layer between the first and second electrodes,
- wherein,
- the memory layer includes (a) a first memory layer an ion source material, and (b) a second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and a transition metal oxide, a transition metal oxynitride, or both,
- aluminum is present in the first memory layer in the amount of 30 to 50 at. %;
- the transition metal is present in the first memory layer in the amount of 7.5 to 26 at. %;
- Ge is present in the first memory layer in the amount of at most 15 at. %;
- and
- Si is present in the first memory layer in the amount of 10-45 at. %.
Dependencies are inferred from the claim text.