Magnetic memory element and storage device using the same
AssigneeIII Holdings 3, LLC
InventorsMichiya Yamada, Yasushi Ogimoto
Life of this patent
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Abstract
A magnetic miniaturized memory element with improved thermal stability of magnetization includes a first magnetic layer, an insulating layer that is formed on the first magnetic layer, a second magnetic layer that is formed on the insulating layer, and an expanded interlayer insulating film that comes into contact with side surfaces of the first and second magnetic layers, where at least one of the first magnetic layer and the second magnetic layer is strained and deformed so as to be elongated in an easy magnetization axis direction of the first magnetic layer or the second magnetic layer or compressive strain remains in any direction in the plane of at least one of the first magnetic layer and the second magnetic layer.
Claims20
A magnetic memory element comprising:
- a lower electrode;
- an upper electrode;
- a magnetic tunnel junction portion between the lower electrode and the upper electrode, wherein the magnetic tunnel junction portion includes a first magnetic layer, an insulating layer on the first magnetic layer, and a second magnetic layer on the insulating layer;
- and
- an interlayer insulating film configured to apply compressive stress to opposite sides of the first or second magnetic layers in a one-axis direction of an in-plane direction of the first or second magnetic layers so as to contract the first or second magnetic layer along the one-axis direction and elongate the first or second magnetic layer in an easy-magnetization direction.
A storage device comprising:
- a plurality of magnetic memory elements, each magnetic memory element including:
- a lower electrode;
- an upper electrode;
- and
- a magnetic tunnel junction portion between the lower electrode and the upper electrode, wherein the magnetic tunnel junction portion includes a first magnetic layer, an insulating layer on the first magnetic layer, and a second magnetic layer on the insulating layer;
- and
- a sealing package having the plurality of magnetic memory elements sealed therein, wherein the sealing package is configured to:
- draw at least one of the first and second magnetic layers;
- and
- contract at least one of the first and second magnetic layers in an in-plane direction.
A storage device comprising:
- a plurality of magnetic memory elements;
- and
- a sealing package having the plurality of magnetic memory elements sealed therein,
- each magnetic memory element including:
- a lower electrode;
- an upper electrode;
- and
- a magnetic tunnel junction portion between the lower electrode and the upper electrode, wherein the magnetic tunnel junction portion includes a first magnetic layer, an insulating layer on the first magnetic layer, and a second magnetic layer on the insulating layer;
- wherein the sealing material is configured to impart strain that elongates the first or second magnetic layer of at least one of the magnetic memory elements in a direction perpendicular to a surface of the respective magnetic layer such that compressive stress is generated and remains in an in-plane direction of the respective magnetic layer.
Dependencies are inferred from the claim text.