Selector for low voltage embedded memory

A method for fabricating a semiconductor device, the method comprising:

• providing a first conductor;
• providing a second conductor;
• and
• providing a bitcell sandwiched between the first and second conductors and for storing a bit, the bitcell comprising a selector element serially connected with a memory element, wherein the selector element has a threshold voltage VTH, an ON-state voltage, and a snapback voltage VSnapback, the selector element configured to transition from an OFF-state to an ON-state in response to a voltage potential across the selector element exceeding VTH, and the selector element further configured to snap back to a hold voltage VH in response to transitioning to the ON-State, wherein VH is less than VTH and VSnapback is VTH−VH;
• wherein the memory element comprises a magnetic tunnel junction (MTJ) element.

An integrated circuit comprising:

• a first conductor;
• a second conductor;
• and
• a bitcell sandwiched between the first and second conductors and for storing a bit, the bitcell comprising a selector element serially connected with a memory element;
• wherein the selector element comprises an insulator layer sandwiched between two electrodes, and the insulator layer comprises a crystalline material,
• wherein the selector element has a threshold voltage VTH and an ON-state voltage, and the crystalline material exhibits an S-shaped IV curve with snapback, the selector element configured to transition from an OFF-state to an ON-state in response to a voltage potential across the selector element exceeding VTH, and the selector element further configured to snap back to a hold voltage VH in response to transitioning to the ON-State, wherein VH is less than VTH and VSnapback is VTH−VH;
• and
• wherein the crystalline material comprises at least one of:
• VO2;
• MnO;
• Ti2O3;
• Fe2O3;
• NbO2;
• TaO2;
• a perovskite structure having the chemical formula R(1-x)AxBO3, where R is a rare-earth atom, A is a bivalent atom, B is selected from manganese, nickel, cobalt, titanium, or vanadium;
• CrS, and FeS.