US 9,543,503 B2 · Magnetic memory cells and methods of fabrication

Abstract

A magnetic cell includes a magnetic tunnel junction that comprises magnetic and nonmagnetic materials exhibiting hexagonal crystal structures. The hexagonal crystal structure is enabled by a seed material, proximate to the magnetic tunnel junction, that exhibits a hexagonal crystal structure matching the hexagonal crystal structure of the adjoining magnetic material of the magnetic tunnel junction. In some embodiments, the seed material is formed adjacent to an amorphous foundation material that enables the seed material to be formed at the hexagonal crystal structure. In some embodiments, the magnetic cell includes hexagonal cobalt (h-Co) free and fixed regions and a hexagonal boron nitride (h-BN) tunnel barrier region with a hexagonal zinc (h-Zn) seed region adjacent the h-Co. The structure of the magnetic cell enables high tunnel magnetoresistance, high magnetic anisotropy strength, and low damping. Methods of fabrication and semiconductor devices are also disclosed.

Claims20

Dependent claims

A magnetic memory cell, comprising:

a seed region over a substrate, the seed region exhibiting a hexagonal crystal structure;
and
a magnetic tunnel junction structure proximate the seed region, the magnetic tunnel junction structure comprising:
at least one magnetic region exhibiting a hexagonal crystal structure matching the hexagonal crystal structure of the seed region;
and
a tunnel barrier region adjacent the at least one magnetic region and exhibiting another hexagonal crystal structure.

3 more elements

A method of forming a magnetic memory cell, comprising:

forming a precursor structure comprising:
forming a seed material over a substrate, the seed material exhibiting a hexagonal crystal structure;
forming a magnetic material adjacent the seed material;
forming a nonmagnetic material adjacent the magnetic material, the nonmagnetic material exhibiting another hexagonal crystal structure matching a hexagonal crystal structure exhibited by a directly adjacent material;
and
forming another magnetic material adjacent the nonmagnetic material;
and
patterning the precursor structure to form a magnetic cell core of the magnetic memory cell.

5 more elements

Dependencies are inferred from the claim text.

Magnetic memory cells and methods of fabrication

Life of this patent

Magnetic memory cells and methods of fabrication

Life of this patent

Abstract

Claims20