Light emitting device

A light emitting device comprising:

• a semiconductor structure layer having a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers;
• and
• a plurality of lower refractive layers provided on an outer surface of the semiconductor structure layer,
• wherein the lower refractive layers include a first lower refractive layer having a first refractive index lower than a refractive index of the semiconductor structure layer on a surface of the semiconductor structure layer and a second lower refractive layer having a second refractive index lower than the first refractive index on an outer surface of the first lower refractive layer,
• wherein the second refractive index of the second lower refractive layer is 1.5 or less,
• wherein the second lower refractive layer is provided with a plurality of protrusions on an outer surface of the second lower refractive layer,
• wherein the second lower refractive layer includes a plurality of metallic oxide powders,
• wherein the outer surface of the semiconductor structure layer includes a plurality of lateral sides and a top surface of the semiconductor structure layer,
• wherein a sum of thicknesses of the plurality of lower refractive layers is less than a thickness of the semiconductor structure layer,
• wherein the plurality of protrusions protrude outwardly on the outer surface of the second lower refractive layer, and
• wherein each of the metallic oxide powders contacts the outer surface of the first lower refractive layer.