Semiconductor light emitting device and method for manufacturing same

A semiconductor light emitting device, comprising:

• a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface, the light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the second surface opposing the first surface;
• a p-side electrode contacting the second semiconductor layer;
• an n-side electrode contacting the first semiconductor layer;
• a p-side pillar provided on the second surface side, the p-side pillar contacting the p-side electrode;
• an n-side pillar provided on the second surface side, the n-side pillar contacting the n-side electrode;
• a first insulating layer provided on an outer side of a side surface of the semiconductor layer;
• an optical layer provided on the first surface of the semiconductor layer and on the first insulating layer;
• a second insulating layer provided on an outer side of a side surface of the first insulating layer and on an outer side of a side surface of the optical layer, the second insulating layer having an upper surface provided at a height more proximal to the semiconductor layer than a height of an upper surface of the optical layer, a portion of the upper surface being tilted with respect to the side surface of the optical layer and approaching the height of the upper surface of the optical layer away from the side surface of the optical layer;
• a p-side interconnect contacting the p-side pillar and extending in a region overlapping the first insulating layer and the second insulating layer;
• and
• an n-side interconnect contacting the n-side pillar, extending in a region overlapping the first insulating layer and the second insulating layer, and being separated from the p-side interconnect.

A method for manufacturing a semiconductor light emitting device, comprising:

• forming a semiconductor layer, the semiconductor layer including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer;
• forming a p-side electrode and an n-side electrode contacting the semiconductor layer;
• forming a p-side pillar electrically connected to the p-side electrode;
• forming an n-side pillar electrically connected to the n-side electrode and separated from the p-side pillar with the first insulating layer interposed between the n-side pillar and the p-side pillar;
• forming a first insulating layer on a side surface of the p-side electrode, on a side surface of the n-side electrode, and on a side surface of the semiconductor layer;
• forming an optical layer on the semiconductor layer and on the first insulating layer;
• bonding a surface of the optical layer to a first layer, and forming a tilted portion in a surface of the first layer, the first layer being light-transmissive, the tilted portion contacting a side surface of the optical layer and being tilted with respect to the side surface of the optical layer;
• forming a second insulating layer contacting the tilted portion, the side surface of the optical layer, and a side surface of the first insulating layer;
• forming a p-side interconnect as one body overlapping the first insulating layer, the second insulating layer, and the p-side pillar, the p-side interconnect electrically connected to the p-side pillar;
• and
• forming an n-side interconnect as one body overlapping the first insulating layer, the second insulating layer, and the n-side pillar, the n-side interconnect electrically connected to the n-side pillar.