Epitaxy base and light-emitting device
AssigneePlayNitride Inc.
InventorsKuan-Yung Liao, Yun-Li Li, Chih-Ling Wu, Yen-Lin Lai
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Abstract
An epitaxy base adapted to form a light-emitting device on is provided. The epitaxy base includes a substrate and a patterned wavelength conversion structure disposed on a part of the substrate and protruding out from the substrate. A light-emitting device including the epitaxy base, a first type semiconductor layer, an emitting layer and a second type semiconductor layer is provided. The first type semiconductor layer is disposed on the substrate and the patterned wavelength conversion structure. The emitting layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the emitting layer.
Claims10
An epitaxy base, adapted to form a light-emitting device thereon, the epitaxy base comprising:
- a substrate;
- a plurality of patterned wavelength conversion structures, disposed on parts of the substrate and protruding out from the substrate;
- and
- a wrapping layer, wrapping the patterned wavelength conversion structures and exposing a part of the substrate, wherein the part of the substrate exposed by the wrapping layer is located between the parts of the substrate on which the patterned wavelength conversion structures are disposed, wherein a temperature tolerance of the wrapping layer is higher than a temperature tolerance of the patterned wavelength conversion structures.
A light-emitting device, comprising:
- an epitaxy base, comprising:
- a substrate;
- a patterned wavelength conversion structure, disposed on a part of the substrate and protruding out from the substrate;
- and
- a wrapping layer wrapping the patterned wavelength conversion structure and exposing a part of the substrate, and a temperature tolerance of the wrapping layer is higher than a temperature tolerance of the patterned wavelength conversion structure;
- a first type semiconductor layer, disposed on the substrate, the patterned wavelength conversion structure and the wrapping layer;
- an emitting layer, disposed on the first type semiconductor layer;
- and
- a second type semiconductor layer, disposed on the emitting layer.
Dependencies are inferred from the claim text.