UV light emitting diode and method of fabricating the same

A UV light emitting diode comprising:

• an active area disposed between an n-type nitride-based semiconductor layer and a p-type nitride-based semiconductor layer,
• the active area comprising:
• a plurality of barrier layers containing Al;
• and
• a plurality of well layers containing Al, wherein the well layers and the barrier layers are disposed in an alternating arrangement that well layers and barrier layers alternate relative to each other,
• wherein at least one of the barrier layers comprises an inclined-composition layer formed between the well layers and having an increasing Al content along a growth direction of the inclined-composition layer,
• wherein a distal end of the inclined-composition layer at a side of the p-type nitride-based semiconductor layer includes AlN.

A UV light emitting diode including:

• an active semiconductor structure disposed between two different conductive type semiconductor layers and configured to emit UV light,
• the active semiconductor structure including:
• barrier layers and well layers that are alternately arranged relative to one another;
• and
• a conditioning layer including a well-conditioning layer adjoining at least one of the well layers and a barrier-conditioning layer adjoining at least one of the barrier layers,
• wherein each well-conditioning layer or barrier-conditioning layer includes a binary nitride-based semiconductor layer to provide a better uniform composition than an adjacent well layer or barrier layer to enhance structure quality and operation performance of the active semiconductor structure;
• wherein the conditioning layer includes AlN.