Light emitting device and method of manufacturing the same

A light-emitting device comprising:

• a first conductive type semiconductor layer;
• a second conductive type semiconductor layer;
• an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;
• a V-pit generation layer between the first conductive type semiconductor layer and the active layer;
• and
• a layer-quality improvement layer on at least a portion of a surface of the V-pit generation layer facing the active layer, the layer-quality improvement layer including an increased concentration of Al in relation to a concentration of Al in the V-pit generation layer.

A method of manufacturing a light-emitting device, the method comprising:

• forming a first conductive type semiconductor layer on a substrate;
• forming a V-pit generation layer on the first conductive type semiconductor layer, the V-pit generation layer including a plurality of V-pits;
• forming a layer-quality improvement layer on the V-pit generation layer, wherein the forming of the layer-quality improvement layer includes,
• increasing a deposition temperature by about 100 through 150° C. with respect to a deposition temperature during the forming of the V-pit generation layer, and
• additionally supplying an M precursor, wherein M is Al or In;
• forming an active layer on the layer-quality improvement layer;
• and
• forming a second conductive type semiconductor layer on the active layer.

A method of manufacturing a light-emitting device, the method comprising:

• forming a first conductive type semiconductor layer on a substrate;
• forming a V-pit generation layer on the first conductive type semiconductor layer, the V-pit generation layer including a plurality of V-pits;
• forming an active layer on the V-pit generation layer;
• forming a layer-quality improvement layer, wherein the forming of the layer-quality improvement layer is performed after the forming of the V-pit generation layer and is based on,
• increasing a temperature of the reaction chamber, and
• supplying an M precursor to a reaction chamber, wherein M is Al or In;
• and
• forming a second conductive type semiconductor layer on the active layer, subsequently to the forming the layer-quality improvement layer.

A light-emitting device comprising:

• a first conductive type semiconductor layer;
• a second conductive type semiconductor layer;
• an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;
• and
• at least one surface roughness improvement layer, including at least one of Al and In, between the first conductive type semiconductor layer and the second conductive type semiconductor layer.