Back to results
US 9,543,472 B2Granted
Diode-based devices and methods for making the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorAnthony J. Lochtefeld
Life of this patent
Estimating the term…
Abstract
In accordance with an embodiment, a diode comprises a substrate, a dielectric material including an opening that exposes a portion of the substrate, the opening having an aspect ratio of at least 1, a bottom diode material including a lower region disposed at least partly in the opening and an upper region extending above the opening, the bottom diode material comprising a semiconductor material that is lattice mismatched to the substrate, a top diode material proximate the upper region of the bottom diode material, and an active diode region between the top and bottom diode materials, the active diode region including a surface extending away from the top surface of the substrate.
Claims20
A method comprising:
- forming a dielectric layer on a first substrate, the first substrate comprising a first crystalline semiconductor material, a first opening and a second opening each being through the dielectric layer and exposing the first crystalline semiconductor material;
- forming a first bottom diode region by growing a first portion of a second crystalline semiconductor material in and extending out of the first opening;
- forming a second bottom diode region by growing a second portion of a second crystalline semiconductor material in and extending out of the second opening;
- forming a first active diode region on the first bottom diode region, and a second active diode region on the second bottom diode region, the first active diode region being physically separated from the second active diode region;
- forming a continuous top diode region on the first active diode region and the second active diode region;
- bonding a second substrate to the continuous top diode region;
- removing the first substrate;
- forming a first contact on the second substrate;
- and
- forming a second contact on the dielectric layer and the second crystalline semiconductor material.
7 more elements
A method comprising:
- depositing a layer of a dielectric material over a first substrate, the first substrate comprising a first crystalline semiconductor material, the dielectric material having a dielectric surface distal from the first substrate;
- patterning a first opening in the dielectric material to expose a first portion of the first substrate, the first opening being through the dielectric surface of the dielectric material;
- forming a first bottom diode region by growing a second crystalline semiconductor material in and above the first opening, the first bottom diode region having a first sidewall surface extending above and away from the dielectric surface of the dielectric material;
- forming a first active diode region directly adjacent the first sidewall surface of the first bottom diode region, the first active diode region having a second sidewall surface extending above and away from the dielectric surface of the dielectric material;
- patterning a second opening in the dielectric material to expose a second portion of the first substrate;
- forming a second bottom diode region by growing the second crystalline semiconductor material in and above the second opening;
- forming a second active diode region adjacent the second bottom diode region, the second active diode region having a third sidewall surface extending above and away from the dielectric surface of the dielectric material;
- forming a top diode region directly adjacent the second sidewall surface of the first active diode region and the third sidewall surface of the second active diode region, the top diode region physically separating the second sidewall surface of the first active diode region from the third sidewall surface of the second active diode region above the dielectric surface of the dielectric material;
- bonding a second substrate to the top diode region;
- and
- removing the first substrate.
8 more elements
A method comprising:
- patterning a first trench in a dielectric layer to expose a first portion of a first substrate, the first substrate comprising a first crystalline semiconductor material, the first trench having an aspect ratio of at least 1;
- forming a first fin as first bottom diode region by growing a second crystalline semiconductor material that is lattice mismatched to the first crystalline semiconductor material in and above the first trench, the first fin having a first sidewall and a second sidewall extending above and away from the dielectric layer;
- forming a first active diode region directly adjacent the first fin, the first active diode region having a second sidewall surface extending above and away from the dielectric layer, the first active diode region extending along the first sidewall, the second sidewall, and a top surface of the first fin;
- forming a top diode region directly adjacent the second sidewall surface of the first active diode region;
- bonding a second substrate to the top diode region;
- and
- removing the first substrate.
4 more elements
Dependencies are inferred from the claim text.