Optoelectronic component and method for the production thereof
AssigneeOSRAM Opto Semiconductors GmbH
InventorsPeter Nagel, Stefan Illek, Martin Strassburg
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Abstract
An optoelectronic device (10, 1010) having a semiconductor layer structure (100, 1100) comprising a first light-active layer (140) and a second light-active layer (240). A first tunnel junction (200) is formed between the first light-active layer (140) and the second light-active layer (240). A first Bragg reflector (160) is formed between the first light-active layer (140) and the first tunnel junction (200). A second Bragg reflector (260) is formed between the second light-active layer (240) and the first tunnel junction (200).
Claims17
An optoelectronic device having a semiconductor layer structure comprising:
- a substrate;
- a first light-active layer and a second light-active layer,
- wherein a first tunnel junction is formed between the first light-active layer and the second light-active layer,
- wherein a first Bragg reflector is formed between the first light-active layer and the first tunnel junction, and
- wherein a second Bragg reflector is formed between the second light-active layer and the first tunnel junction;
- wherein at least a portion of an electromagnetic radiation emitted by the first light-active layer leaves the optoelectronic device via the substrate,
- wherein the optoelectronic device is a light emitting diode, and
- wherein at least a portion of the electromagnetic radiation emitted in the semiconductor layer structure leaves the optoelectronic device through a surface of the semiconductor layer structure that faces away from the substrate.
Dependencies are inferred from the claim text.