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US 9,543,468 B2Granted
High bandgap III-V alloys for high efficiency optoelectronics
AssigneeAlliance for Sustainable Energy, LLC
InventorsKirstin Alberi, Angelo Mascarenhas, Mark Wanlass
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Abstract
High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al1-xInxP layer, and a step-grade buffer between the substrate and at least one Al1-xInxP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al1-xInxP is reached.
Claims20
An optoelectronic device comprising:
- a first device layer comprising an alloy consisting essentially of Al1-xInxP, wherein:
- 0.54≦x<1.0,
- the first device layer is at least partially ordered, and
- the first device layer is configured to emit light;
- a substrate comprising at least one of GaAs, Si, Ge, InP, or GaP;
- and
- a first compositionally-graded buffer layer comprising:
- a first step-grade buffer layer in contact with the substrate;
- a second step-grade buffer layer in contact with the first device layer, and
- between one and six additional step-grade buffer layers positioned between the substrate and the first device layer, wherein:
- the first step-grade buffer layer is substantially lattice-matched with the substrate,
- the second step-grade buffer layer is substantially lattice-matched with the first device layer, and
- each additional step-grade buffer layer has a lattice constant that is between the lattice constants of its two immediate closest neighboring step-grade buffer layers.
10 more elements
Dependencies are inferred from the claim text.