Back to results
US 9,543,467 B2Granted
Light emitting device
AssigneeLG Innotek Co., Ltd.
InventorJune O Song
Life of this patent
Estimating the term…
Abstract
Disclosed is a light emitting device. The light emitting device includes a first conductive semiconductor layer, an active layer over the first conductive semiconductor layer, a second conductive semiconductor layer over the active layer, a superlattice structure layer over the second conductive semiconductor layer, and a first current spreading layer including a transmissive conductive thin film over the superlattice structure layer.
Claims24
A light emitting device comprising:
- a first conductive semiconductor layer;
- an active layer over a top surface of the first conductive semiconductor layer;
- a second conductive semiconductor layer over a top surface of the active layer;
- a superlattice structure layer over a top surface of the second conductive semiconductor layer, the superlattice structure layer having a multi-layer structure;
- a first current spreading layer over a top surface of the superlattice structure layer, the first current spreading layer including a group III nitride-based conductive thin film;
- a second current spreading layer over a top surface of the first current spreading layer, the second current spreading layer including a transmissive conductive thin film;
- a third current spreading layer over a top surface the second current spreading layer, the third current spreading layer including a reflective conductive thin film;
- and
- a second electrode layer on the reflective conductive thin film,
- wherein the top surface of the first current spreading layer comprises a first light extracting structure having a concave pattern or a convex pattern;
- wherein the first current spreading layer forms an ohmic contact interface with respect to the superlattice structure layer,
- wherein a material of the first light extracting structure is same as a material of the first current spreading layer,
- wherein the superlattice structure layer is directly in contact with the second conductive semiconductor layer, and
- wherein the transmissive conductive thin film is spaced apart from the superlattice structure layer.
11 more elements
A light emitting device comprising:
- a first conductive semiconductor layer;
- an active layer over the first conductive semiconductor layer;
- a second conductive semiconductor layer over the active layer;
- a superlattice structure layer over the second conductive semiconductor layer, the superlattice structure layer having a multi-layer structure;
- a first current spreading layer over the superlattice structure layer, the first current spreading layer including a transmissive conductive thin film;
- a second current spreading layer over the first current spreading layer, the second current spreading layer including a transmissive conductive thin film;
- a third current spreading layer over the second current spreading layer, the third current spreading layer including a reflective conductive thin film;
- and
- a second electrode layer on the reflective conductive thin film,
- wherein a top surface of the first current spreading layer comprises a first light extracting structure having a concave pattern or a convex pattern,
- wherein the second conductive semiconductor layer is disposed between the superlattice structure and the active layer,
- wherein the superlattice structure is disposed between the second conductive semiconductor layer and the first current spreading layer,
- wherein the first current spreading layer includes a group III nitride-based conductive thin film,
- wherein a material of the first light extracting structure is same as a material of the first current spreading layer,
- wherein the superlattice structure layer is directly in contact with the second conductive semiconductor layer, and
- wherein the transmissive conductive thin film is spaced apart from the superlattice structure layer.
13 more elements
Dependencies are inferred from the claim text.