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US 9,543,463 B2Granted
Signal distribution in integrated circuit using optical through silicon via
AssigneeInternational Business Machines Corporation
InventorsEffendi Leobandung, James D. Warnock, Dieter Wendel
Life of this patent
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Abstract
An optical through silicon via is formed in a silicon substrate of an integrated circuit. A photo detector is formed within the integrated circuit and is optically coupled to a first side of the optical through silicon via. A light generating source optically coupled to a second side of the optical through silicon via is provided. The photo detector is configured to receive a light, generated by the light generating source, propagating through the optical through silicon via. The light, generated by the light generating source, is controlled by a signal generated by a signal generating source.
Claims11
An apparatus comprising:
- a signal generating source;
- a silicon substrate of an integrated circuit comprising at least one optical through silicon via, wherein the optical through silicon via comprises a nitride layer as an optical transmission medium, and wherein the optical through silicon via is formed by etching the nitride layer to recess a top surface of the nitride layer to below a top surface of the silicon substrate thereby forming a trench, and forming a silicon epilayer over a top surface of a remainder of the nitride layer and within the trench;
- a photo detector formed within the integrated circuit and optically coupled to a first side of the at least one optical through silicon via;
- a set of electrical elements coupled to the photo detector;
- and
- a light generating source optically coupled to a second side of the optical through silicon via;
- wherein the photo detector is operative to receive a light, generated by the light generating source, propagating through the optical through silicon via, and wherein the light, generated by the light generating source, is an optical signal controlled by a signal generated by the signal generating source;
- wherein the photo detector is further operative to convert the optical signal to an electrical signal, and wherein the electrical signal is distributed to the set of electrical elements.
5 more elements
A design structure tangibly embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, the design structure comprising:
- a silicon substrate of the integrated circuit comprising at least one optical through silicon via, wherein the optical through silicon via comprises a nitride layer as an optical transmission medium, and wherein the optical through silicon via is formed by etching the nitride layer to recess a top surface of the nitride layer to below a top surface of the silicon substrate thereby forming a trench, and forming a silicon epilayer over a top surface of a remainder of the nitride layer and within the trench;
- a photo detector formed within the integrated circuit and optically coupled to a first side of the at least one optical through silicon via;
- and
- a set of electrical elements coupled to the photo detector;
- wherein the photo detector is operative to receive a light, generated by a light generating source optically coupled to a second side of the optical through silicon via, propagating through the optical through silicon via, and wherein the light, generated by the light generating source, is an optical signal controlled by a signal generated by a signal generating source;
- wherein the photo detector is further operative to convert the optical signal to an electrical signal, and wherein the electrical signal is distributed to the set of electrical elements.
3 more elements
An integrated circuit comprising:
- a silicon substrate of the integrated circuit comprising at least one optical through silicon via, wherein the optical through silicon via comprises a nitride layer as an optical transmission medium, and wherein the optical through silicon via is formed by etching the nitride layer to recess a top surface of the nitride layer to below a top surface of the silicon substrate thereby forming a trench, and forming a silicon epilayer over a top surface of a remainder of the nitride layer and within the trench;
- a photo detector formed within the integrated circuit and optically coupled to a first side of the at least one optical through silicon via;
- and
- a set of electrical elements coupled to the photo detector;
- wherein the photo detector is operative to receive a light, generated by a light generating source optically coupled to a second side of the optical through silicon via, propagating through the optical through silicon via, and wherein the light, generated by the light generating source, is an optical signal controlled by a signal generated by a signal generating source;
- wherein the photo detector is further operative to convert the optical signal to an electrical signal, and wherein the electrical signal is distributed to the set of electrical elements.
3 more elements
Dependencies are inferred from the claim text.