Semiconductor device including junction field effect transistor and method of manufacturing the same

A semiconductor device, comprising:

• a junction field effect transistor, wherein the junction field effect transistor includes:
• a channel region of a first conductivity type as a current passage;
• a pair of gate regions of a second conductivity type opposite to the first conductivity type, formed so as to sandwich the channel region therebetween;
• and
• a source region disposed on an upper surface of the channel region,
• wherein each of the pair of gate regions includes:
• a low concentration gate region;
• and
• a high concentration gate region whose impurity concentration is higher than an impurity concentration of the low concentration gate region,
• wherein the high concentration gate region is included in the low concentration gate region,
• wherein, in a plan view, with respect to a centerline of the channel region, outer edges of the source region are located between inner edges of the low concentration gate regions of the pair of gate regions, and
• wherein the channel region extends, with a uniform concentration, from an area between the pair of gate regions to a bottom surface of the low concentration gate region.