High voltage junction field effect transistor
AssigneeMacronix International Co., Ltd.
InventorsWing-Chor Chan, Hsing-Chih Wu
Life of this patent
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Abstract
Provided is a semiconductor device, including: a substrate, a well region of a first conductivity type, a field region of a second conductivity type, a first doped region of the first conductivity type, and a second doped region of the second conductivity type. The well region is located in the substrate. The field region is located in the well region. The first doped region is located in the well region of a first side of the field region. The second doped region is located in the field region, wherein the first doped region is at least partially surrounded by the second doped region.
Claims19
A semiconductor device, comprising:
- a well region of a first conductivity type disposed in a substrate;
- a field region of a second conductivity type disposed in the well region;
- a first doped region of the first conductivity type disposed in the well region on a first side of the field region;
- a second doped region of the second conductivity type disposed in the field region, wherein the second doped region at least partially surrounds the first doped region;
- a third doped region of the first conductivity type disposed in the well region on a second side of the field region, wherein the field region is disposed between the first doped region and the third doped region;
- a first top doped region of the second conductivity type disposed between the third doped region and the second doped region;
- a plurality of second top doped regions of the second conductivity type disposed in the well region between the field region and the first doped region;
- and
- a fourth doped region of the second conductivity type disposed in the substrate on the second side of the field region, wherein the third doped region is disposed between the first top doped region and the fourth doped region.
A semiconductor device, comprising:
- a first well region of a first conductivity type disposed in a substrate of a second conductivity type;
- a first field region of the second conductivity type disposed in the first well region;
- a first doped region of the first conductivity type disposed in the first well region on a first side of the first field region;
- a second doped region of the second conductivity type disposed in the first field region;
- a third doped region of the first conductivity type disposed in the first well region on a second side of the first field region, wherein the second doped region is disposed between the first doped region and the third doped region;
- a first top doped region of the second conductivity type disposed in the first well region under the first field region;
- and
- a first insertion layer of the first conductivity type disposed above a portion of the first field region, wherein the portion of the first field region is disposed between the first insertion layer and the first top doped region.
Dependencies are inferred from the claim text.