High voltage junction field effect transistor

A high voltage junction field effect transistor, comprising:

• a semiconductor substrate provided with a first conductivity type epitaxial layer;
• a second conductivity type drift region located on the first conductivity type epitaxial layer;
• a second conductivity type drain heavily doped region located in the second conductivity type drift region;
• two drain terminal oxygen regions located at opposite sides of the second conductivity type drain heavily doped region, and both positioned on the second conductivity type drift region;
• two first conductivity type well regions located at opposite sides of the second conductivity type drift region, and each first conductivity type well region being isolated from the second conductivity type drift region by the first conductivity type epitaxial layer;
• a second conductivity type source heavily doped region and a first conductivity type gate heavily doped region in each first conductivity type well region, a gate source terminal oxygen region being provided between the second conductivity type source heavily doped region and the first conductivity type gate heavily doped region to isolate the second conductivity type source heavily doped region from the first conductivity type gate heavily doped region;
• two first second conductivity type channel layers each located between one second conductivity type source heavily doped region and the second conductivity type drift region;
• two field electrode plates respectively located on the two second conductivity type channel layers, each field electrode plate extending to a part of the surface of corresponding drain terminal oxygen region, and a dielectric layer being provided between the field electrode plate and the second conductivity type channel layer, the dielectric layer also located between the field electrode plate and the second conductivity type drift region;
• wherein, a drain electrode electrically is led out from the two second conductivity type drain heavily doped region;
• a source electrode electrically is led out from connections of the two field electrode plates at opposite sides of the drain electrode and the two second conductivity type source heavily doped regions;
• and a gate electrode electrically is led out from a connection of the two first conductivity type gate heavily doped regions at opposite sides of the drain electrode.