US 9,543,448 B1 · Semiconductor structure and method of forming the same

Abstract

The present invention provides a semiconductor structure, including a base, a patterned oxide semiconductor (OS) layer, two source/drain regions, a protective layer, a gate layer and a gate dielectric layer. The patterned OS layer is disposed on the base. Two source/drain regions are disposed on the patterned OS layer and are separated by a recess. Each source/drain region includes an inner sidewall facing the recess and an outer sidewall opposite to the inner sidewall. The protective layer is disposed on a sidewall of the patterned OS layer but is not on the inner sidewall of the source/drain region. The gate layer is disposed on the patterned OS layer, and the gate dielectric layer is disposed between the gate layer and the patterned OS layer. The present invention further provides a method of forming the same.

Claims10

Dependent claims

A method of forming a semiconductor structure, comprising:

forming a patterned oxide semiconductor layer and a patterned conductive layer on a base;
forming a protective layer on the base, wherein the protective layer is disposed at least on a sidewall of the patterned oxide semiconductor layer;
patterning the patterned conductive layer to form two source/drain regions, wherein the two source/drain regions are separated by a recess, and each source/drain region respectively comprises an inner sidewall facing the recess and an outer sidewall disposed opposite to the inner sidewall, and the protective layer is not disposed on the inner sidewall of the source/drain region;
and
forming a gate layer and a gate dielectric layer on the patterned oxide semiconductor layer.

2 more elements

Dependencies are inferred from the claim text.

Semiconductor structure and method of forming the same

Life of this patent

Semiconductor structure and method of forming the same

Life of this patent

Abstract

Claims10