Oxynitride semiconductor thin film
AssigneeSumitomo Metal Mining Co., Ltd.
InventorsEiichiro Nishimura, Tokuyuki Nakayama, Masashi Iwara
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Abstract
The purpose of the present invention is to provide an oxide semiconductor thin film, which has relatively high carrier mobility and is suitable as a channel layer material for a TFT, from an oxynitride crystalline thin film. According to the present invention, a crystalline oxynitride semiconductor thin film is obtained by annealing an amorphous oxynitride semiconductor thin film containing In, O, and N or an amorphous oxynitride semiconductor thin film containing In, O, N, and an additional element M, where M is one or more elements selected from among Zn, Ga, Ti, Si, Ge, Sn, W, Mg, Al, Y and rare earth elements, at a heating temperature of 200° C. or more for a heating time of 1 minute to 120 minutes.
Claims7
An oxynitride semiconductor thin film comprising:
- a crystalline oxynitride semiconductor comprising In as a main component, O, N, and added element M, where M is one or more element selected from among Zn, Ga, Ti, Si, Ge, Sn, W, Mg, Al, Y, and rare-earth elements, the amount of added element M included in terms of atomic ratio M/(In+M) is greater than 0 but no greater than 0.20;
- a crystal structure of In2O3 phase of Bixbyite structure with N atoms solid-soluted in the In2O3 phase, the amount of N included in the crystalline oxynitride semiconductor being 3×1020 atoms/cm3 or more but less than 1×1022 atoms/cm3, and
- a carrier density of 1×1017 cm−3 or less, and
- a carrier mobility of 5 cm2/Vsec or more.
Dependencies are inferred from the claim text.