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US 9,543,444 B2Granted
Oxide sputtering target, and thin film transistor using the same
AssigneeSamsung Display Co., Ltd.
InventorsKatsushi Kishimoto, Yoshinori Tanaka, Yeon Keon Moon, Sang Woo Sohn, Sang Won Shin, Takayuki Fukasawa
Life of this patent
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Abstract
An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.
Claims4
An oxide sputtering target comprising:
- at least one of indium (In), zinc (Zn), tin (Sri), and gallium (Ga);
- and
- tungsten (W) in an amount from 0.005 mol % to 1 mol %,
- wherein each of the atoms in the oxide sputtering target is arranged with a hexagonal close packed structure.
1 more element
An oxide sputtering target comprising:
- at least one of thallium (Ti), indium (In), zinc (Zn), tin (Sn), and gallium (Ga);
- and
- tungsten (W) in an amount from 0.005 mol % to 0.1 mol %;
- wherein each of the atoms in the oxide sputtering target is arranged with a hexagonal close packed structure.
1 more element
Dependencies are inferred from the claim text.