Back to results
US 9,543,441 B2Granted
Methods, apparatus and system for fabricating high performance finFET device
AssigneeGlobalfoundries Inc.
InventorsKi Young Lee, Byoung-Gi Min, Kijik Lee
Life of this patent
Estimating the term…
Abstract
At least one method, apparatus and system disclosed herein fin field effect transistor (finFET) comprising a bulbous fin head. A fin of a gate of a transistor is formed. A first recess step is performed for striping a hard mask material by a first dimension to expose a first portion of the fin. An epitaxy layer is formed upon the first portion. An oxidation process is performed upon the fin. An oxide removal process is performed upon the fin to provide a bulbous shape upon the first portion.
Claims15
A method, comprising:
- forming a fin of a gate of a transistor;
- performing a first recess step for stripping a hard mask material by a first dimension to expose a first portion of said fin;
- forming an epitaxy layer upon said first portion;
- performing a second recess step for further stripping said hard mask material by a second dimension to expose a second portion of said fin;
- performing an oxidation process upon said fin;
- and
- performing an oxide removal process upon said fin to provide a bulbous shape upon said first portion.
4 more elements
A system, comprising:
- a semiconductor device processing system to manufacture a semiconductor device comprising at least one fin field effect transistor (finFET);
- and
- a processing controller operatively coupled to said semiconductor device processing system, said processing controller configured to control an operation of said semiconductor device processing system;
- wherein said semiconductor device processing system is adapted to:
- form a fin of a gate of said finFET;
- perform a first recess step for stripping a hard mask material by a first dimension to expose a first portion of said fin;
- form an epitaxy layer upon said first portion;
- performing a second recess step for further stripping said hard mask material by a second dimension to expose a second portion of said fin;
- perform an oxidation process upon said fin;
- and
- perform an oxide removal process upon said fin to provide a bulbous shape upon said first portion.
8 more elements
Dependencies are inferred from the claim text.