Semiconductor device structure and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChin-I Liao, Shih-Chieh Chang
Life of this patent
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Abstract
Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a semiconductive substrate; a gate structure over a fin structure of the semiconductive substrate; a channel portion of the fin structure under the gate structure; and at least one epitaxy region disposed over the semiconductive substrate and in contact with the channel portion. The epitaxy region includes a substance with a first lattice constant larger than a second lattice constant of the semiconductive substrate; and a concentration profile of the substance in the epitaxy region being decreasing from near a bottom portion to near a top portion. The bottom portion is closer to the channel portion than the top portion.
Claims16
A semiconductor device comprising:
- a semiconductive substrate;
- a gate structure over a fin structure of the semiconductive substrate;
- a channel portion of the fin structure under the gate structure;
- at least one epitaxy region disposed over the semiconductive substrate and in contact with the channel portion, and
- the epitaxy region comprising a substance with a first lattice constant larger than a second lattice constant of the semiconductive substrate, wherein the epitaxy region comprises a bottom portion and a middle portion, the bottom portion is closer to the channel portion than the middle portion, a concentration profile of the substance in the bottom portion is substantially constant, and the concentration profile of the substance in the middle portion decreases monotonically from near the bottom portion.
A semiconductor device comprising:
- a semiconductive substrate comprising a fin structure;
- a sidewall spacer of a gate structure in contact with a channel portion of the fin structure;
- at least one epitaxy region disposed over the semiconductive substrate and in contact with the channel portion and the gate structure, and the epitaxy region comprising:
- a bulk portion between a bottom portion and a top portion, and the bottom portion being closer to the channel portion than the top portion;
- and
- a substance with a first lattice constant larger than a second lattice constant of the channel portion;
- a concentration profile of the substance in the bottom portion is substantially constant, the concentration profile of the substance in the bulk portion decreases monotonically from near the bottom portion to near the top portion, and the concentration profile of the substance in the top portion is substantially constant.
A semiconductor device comprising:
- a semiconductive substrate comprising a fin structure protruding above the semiconductive substrate;
- a channel portion of the fin structure partially inside a gate structure;
- at least one epitaxy region above the fin structure and partially in contact with the channel portion and the gate structure, and the epitaxy region comprising:
- a second portion between a first portion and a third portion, and the first portion being closer to the semiconductive substrate than the third portion;
- and
- a substance with a first lattice constant larger than a second lattice constant of the semiconductive substrate;
- a concentration profile of the substance being decreasing in the second portion from near the first portion to near the third portion, the concentration profile of the substance comprises a his hest concentration of the substance in the second portion near the first portion.
Dependencies are inferred from the claim text.