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US 9,543,434 B2Granted
Device active channel length/width greater than channel length/width
AssigneeHewlett-Packard Development Company, L.P.
InventorTrudy Benjamín
Life of this patent
Estimating the term…
Abstract
A device including a drain, a channel, and a gate. The channel surrounds the drain and has a channel length to width ratio. The gate is situated over the channel to provide an active channel region that has an active channel region length to width ratio that is greater than the channel length to width ratio.
Claims14
A device comprising:
- a drain;
- a channel that surrounds the drain and has a channel length to width ratio;
- and
- a gate situated over the channel to provide an active channel region that has an active channel region length to width ratio that is greater than the channel length to width ratio.
1 more element
A semiconductor device comprising:
- a drain;
- a channel that surrounds the drain and has an active channel region that has an active channel region length, and an inactive channel region that has an inactive channel region length that is less than the active channel region length;
- and
- a gate situated over the active channel region.
1 more element
A method of manufacturing a device, comprising:
- surrounding a drain with a channel having a channel length to width ratio;
- disposing a gate over the channel;
- disposing a dielectric layer on the gate and the drain;
- etching the dielectric layer to provide a drain contact and to etch away the dielectric layer on a first portion of the gate to provide a gate contact, and on a second portion of the gate;
- disposing metal on the device to contact the gate through the gate contact and to contact the drain through the drain contact;
- and
- etching the metal to provide a gate lead and a drain lead and to etch away the second portion of the gate and the metal on the second portion of the gate, wherein etching the metal etches away the second portion of the gate to provide an active channel region length to width ratio that is greater than the channel length to channel width ratio.
4 more elements
Dependencies are inferred from the claim text.