Method for growing III-V epitaxial layers and semiconductor structure

A method of manufacturing a semiconductor III-V structure, comprising:

• providing a substrate;
• providing an active layer, by epitaxially growing a III-V semiconducting layer stack on top of the substrate, wherein epitaxially growing the III-V semiconducting layer stack comprises (i) growing a first active III-V layer and (ii) growing a second III-V active layer, thereby forming a two-dimensional electron gas between the first III-V active layer and the second III-V active layer;
• providing a protection layer stack for use as a mask for the first III-V active layer and the second III-V active layer, wherein the protection layer stack comprises (i) a III-V evaporation layer, (ii) a III-V etch stop layer on top of the evaporation layer, and (iii) a dielectric mask layer on top of the etch stop layer;
• locally etching the dielectric mask layer and the III-V etch stop layer in a gate region;
• and
• evaporating the III-V evaporation layer in the gate region to expose the second III-V active layer, wherein the dielectric mask layer remains in a region outside the gate region after evaporating the III-V evaporation layer in the gate region.