Semiconductor device

A semiconductor device, comprising:

• a first semiconductor region of a first conductivity type p;
• a second semiconductor region of a second conductivity type that is provided above the first semiconductor region;
• a gate electrode including a portion that is surrounded by the second semiconductor region via a gate insulating layer;
• a first electrode that includes a portion surrounded by the second semiconductor region via a first insulating layer, the first electrode being separated from the gate electrode;
• a third semiconductor region of the second conductivity type that is provided in a portion of the second semiconductor region between the first insulating layer and the gate insulating layer, the third semiconductor region contacting the first insulating layer and having a concentration of carriers of the second conductivity type that is higher than a concentration of carriers of the second conductivity type in the second semiconductor region;
• a fourth semiconductor region of the first conductivity type that includes a first portion aligned along a first direction with the third semiconductor region and is provided on the second semiconductor region and the third semiconductor region and between the gate electrode and the first electrode;
• a fifth semiconductor region of the second conductivity type that is provided in the fourth semiconductor region, the fifth semiconductor region contacting the gate insulating layer and aligned along a second direction with the first portion, the second direction being perpendicular to the first direction;
• and
• a sixth semiconductor region of the first conductivity type that is provided between a portion of the second semiconductor region and the third semiconductor region in the first direction.