Protection device and related fabrication methods

A semiconductor device comprising:

• a first region of semiconductor material having a first conductivity type and a first dopant concentration;
• a base well region within the first region, the base well region having the first conductivity type and a second dopant concentration greater than the first dopant concentration of the first region;
• a base contact region within the base well region, the base contact region having the first conductivity type and a third dopant concentration greater than the first dopant concentration;
• an emitter region of semiconductor material within the base well region, the emitter region having a second conductivity type opposite the first conductivity type;
• and
• a collector region of semiconductor material having the second conductivity type, wherein:
• at least a portion of the first region resides between the emitter region and the collector region;
• a depth of the collector region is greater than a depth of the emitter region;
• a depth of a second portion of the first region underlying the emitter region is greater than or equal to the depth of the collector region;
• and
• the collector region comprises:
• a well region of semiconductor material having the second conductivity type and a first dopant concentration;
• and
• a buried region of semiconductor material underlying the well region, the buried region having the second conductivity type and a second dopant concentration greater than or equal to the first dopant concentration.

A semiconductor device comprising:

• a first region of semiconductor material having a first conductivity type;
• an emitter region of semiconductor material having a second conductivity type opposite the first conductivity type;
• a collector region of semiconductor material having the second conductivity type;
• and
• a base well region within the first region, the base well region having the emitter region formed therein, the base well region having the first conductivity type and a first dopant concentration greater than a second dopant concentration of the first region by a factor of at least 10, wherein:
• at least a portion of the first region resides between the emitter region and the collector region;
• a depth of the collector region is greater than a depth of the emitter region;
• a depth of a second portion of the first region underlying the emitter region is greater than or equal to the depth of the collector region;
• a distance between a lateral boundary of the base well region and a proximal lateral boundary of the collector region is greater than zero;
• and
• the portion of the first region resides between the collector region and the base well region.