Semiconductor liner of semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Cheng Ching, Chih-Hao Wang, Carlos H. Diaz
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Abstract
The disclosure relates to a fin field effect transistor (FinFET) formed in and on a substrate having a major surface. The FinFET includes a fin structure protruding from the major surface, which fin includes a lower portion, an upper portion, and a middle portion between the lower portion and upper portion, wherein the fin structure includes a first semiconductor material having a first lattice constant; a pair of notches extending into opposite sides of the middle portion; and a semiconductor liner adjoining the lower portion. The semiconductor liner is a second semiconductor material having a second lattice constant greater than the first lattice constant.
Claims20
A method of fabricating a fin field effect (FinFET) transistor, the method comprising:
- forming a fin structure extending from a semiconductor substrate;
- forming a semiconductor liner on a lower portion of sidewalls of the fin structure;
- forming an isolation structure on sidewalls of the semiconductor liner, the isolation structure having a topmost surface below a topmost surface of the semiconductor liner;
- and
- oxidizing the semiconductor liner to form oxidized regions extending from an outer sidewall of the semiconductor liner to the sidewalls of the fin structure.
A method of fabricating a fin field effect (FinFET) transistor, the method comprising:
- providing a substrate;
- forming a plurality of fin structures extending from a top surface of the substrate, each fin structure including a first portion closest to the top surface, a second portion furthest from the top surface, and a third portion interjacent the first portion and third portion, wherein the fin structures comprise a first semiconductor material;
- growing a second semiconductor material on the plurality of fin structures, the second semiconductor material being lattice mismatched to the first semiconductor material;
- depositing a dielectric layer between individual ones of the plurality of fin structures;
- recessing a first portion of the dielectric layer to expose a first portion of the second semiconductor material;
- removing the first portion of the second semiconductor material to expose the third portion of the fin structures;
- recessing a second portion of the dielectric layer to expose a second portion of the second semiconductor material;
- and
- oxidizing the second portion of the second semiconductor material to form a notch extending into the third portion of the fin structures.
A method of fabricating a fin field effect (FinFET) transistor, the method comprising:
- forming a semiconductor structure extending from a semiconductor substrate;
- forming a semiconductor liner extending from the semiconductor substrate and partially up a sidewall of the semiconductor structure;
- embedding a portion of the semiconductor liner in a layer, while leaving a topmost portion of the semiconductor structure un-embedded;
- and
- oxidizing the un-embedded portion of the semiconductor liner to form oxidized regions extending from the sidewall of the semiconductor structure into the semiconductor structure.
Dependencies are inferred from the claim text.