Thin film transistor driving backplane and manufacturing method thereof, and display panel
AssigneeBoe Technology Group Co., Ltd.
InventorsZuqiang Wang, Chien Hung Liu
Life of this patent
Estimating the term…
Loading patent…
AssigneeBoe Technology Group Co., Ltd.
InventorsZuqiang Wang, Chien Hung Liu
Estimating the term…
The embodiments of the present invention provide a thin film transistor driving backplane and a manufacturing method thereof, and a display panel. The manufacturing method may comprise: manufacturing a backplane base disposed with a plurality of active device structures; disposing an electrode layer on the backplane base; and manufacturing the electrode layer into a source electrode, a drain electrode and a pixel electrode integrally disposed with the drain electrode by one patterning process. According to the embodiment of the present invention, the electrode layer is manufactured into a plurality of source electrodes, drain electrodes and pixel electrodes, integrally disposed with the drain electrode, by one time patterning process, so that the source electrode, the drain electrode and the pixel electrode are all at the same electrode layer, and the source electrode, the drain electrode and the pixel electrode whose formation needs two patterning processes in the existing method, is simplified to one time patterning process, so it reduces the thickness of the thin film transistor driving backplane, simplifies the manufacturing step, and saves the manufacturing cost.
A manufacturing method of a thin film transistor driving backplane, the method comprising:
Dependencies are inferred from the claim text.