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US 9,543,408 B1Granted
Method of forming patterned hard mask layer
AssigneeUnited Microelectronics Corp.
InventorsYi-Hui Lin, Keng-Jen Lin, Chun-Yao Yang, Yu-Ren Wang
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Abstract
A method of forming a patterned hark mask layer includes the following steps. A semiconductor substrate is provided. An amorphous silicon layer is formed on the semiconductor substrate. An implantation process is performed on the amorphous silicon layer. An annealing treatment is performed on the amorphous silicon layer after the implantation process. A patterned hard mask layer is formed on the amorphous silicon layer after the annealing treatment.
Claims12
A method of forming a patterned hark mask layer, comprising:
- providing a semiconductor substrate;
- forming an amorphous silicon layer on the semiconductor substrate;
- performing an implantation process on the amorphous silicon layer, wherein the implantation process is performed only on alignment regions on the semiconductor substrate;
- performing an annealing treatment on the amorphous silicon layer after the implantation process;
- and
- forming a patterned hard mask layer on the amorphous silicon layer after the annealing treatment.
3 more elements
Dependencies are inferred from the claim text.