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US 9,543,407 B2Granted
Low-K spacer for RMG finFET formation
AssigneeInternational Business Machines Corporation
InventorsHong He, Chiahsun Tseng, Tenko Yamashita, Chun-Chen Yeh, Yunpeng Yin
Life of this patent
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Abstract
A method for semiconductor fabrication includes providing mask layers on opposite sides of a substrate, the substrate having one or more mandrels. Dummy spacers are formed along a periphery of the mask layers. A dummy gate structure is formed between the dummy spacers. The dummy spacers are removed to provide a recess. Low-k spacers are formed in the recess.
Claims13
A method for semiconductor fabrication, comprising:
- providing mask layers on opposite sides of a substrate, the substrate having one or more mandrels, the mask layers extending over an upper surface of the one or more mandrels;
- forming dummy spacers along a periphery of the mask layers, the dummy spacers including a portion that is present on said upper surface of the mandrel;
- forming a dummy gate structure on said upper surface of the mandrel between the dummy spacers;
- removing the dummy spacers to provide a recess;
- forming low-k spacers in the recess;
- removing the mask layers after forming the low-k spacers;
- and
- forming source and drain regions after removing the mask layers.
5 more elements
A method for semiconductor fabrication, comprising:
- providing mask layers on opposite sides of a substrate, the substrate having one or more mandrels, the mask layers extending over an upper surface of the one or more mandrels;
- forming dummy spacers along a periphery of the mask layers, the dummy spacers including a portion that is present on said upper surface of the mandrel;
- forming a dummy gate structure on said upper surface of the mandrel between the dummy spacers;
- removing the dummy spacers to provide a recess;
- forming low-k spacers in the recess;
- removing the mask layers after forming the low-k spacers to form raised source/drain regions such that source/drain regions of neighboring mandrels are epitaxially merged;
- and
- removing the dummy gate structure and forming a replacement metal gate structure.
5 more elements
Dependencies are inferred from the claim text.