Bipolar junction transistor with multiple emitter fingers
AssigneeGlobalfoundries Inc.
InventorsHanyi Ding, Vibhor Jain, Qizhi Liu
Life of this patent
Estimating the term…
Abstract
Device structures for a bipolar junction transistor and methods of fabricating a device structure for a bipolar junction transistor. A first semiconductor layer is formed on a substrate, and a second semiconductor layer is formed on the first semiconductor layer. The first semiconductor layer, the second semiconductor layer, and the substrate are etched to define first and second emitter fingers from the second semiconductor layer and trenches in the substrate that are laterally positioned between the first and second emitter fingers. The first semiconductor layer may function as a base layer in the device structure.
Claims8
A device structure for a bipolar junction transistor formed using a substrate, the device structure comprising:
- a base layer on the substrate;
- a first emitter finger and a second emitter finger on the base layer;
- and
- a plurality of first trenches in the substrate, the plurality of first trenches laterally positioned between the first emitter finger and the second emitter finger,
- wherein the plurality of first trenches are arranged in a row parallel to the first emitter finger and parallel to the second emitter finger, and the base layer includes a section that is positioned between an adjacent pair of the plurality of first trenches in the row.
Dependencies are inferred from the claim text.