Integrated high performance lateral schottky diode

A diode, comprising:

• a two-dimensional electron gas formed in a heterojunction defined at an interface between first and second semiconductor material layers;
• first and second layers of insulating material disposed on the second semiconductor layer;
• a first and second electrodes disposed in the second layer of insulating material, wherein the first electrode disposed a first lateral distance from the second electrode, wherein the first electrode is coupled to the second semiconductor material layer through the first layer of insulating material, wherein the second electrode is coupled to the heterojunction through the first layer of insulating material and the second layer of insulating material;
• third and fourth layers of insulating material disposed on the second insulating layer;
• a first via disposed in the fourth layer of insulating material and coupled to the second electrode through the third layer of insulating material;
• and
• a first field plate disposed in the fourth layer of insulating material, wherein an edge of the first field plate laterally extends towards first via in the fourth layer of insulating material, wherein the first via and is separated in the fourth layer of insulating material by a second lateral distance from an edge of the first via, wherein the first field plate is coupled to the first electrode through the third layer of insulating material.