Device having sloped gate profile and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsRu-Shang Hsiao, Ling-Sung Wang, Chih-Mu Huang, Yao-Tsung Chen, Ming-Tsang Tsai, Kuan-Yu Chen
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Abstract
A semiconductor device having an open profile gate electrode, and a method of manufacture, are provided. A funnel-shaped opening is formed in a dielectric layer and a gate electrode is formed in the funnel-shaped opening, thereby providing a gate electrode having an open profile. In some embodiments, first and second gate spacers are formed alongside a dummy gate electrode. The dummy gate electrode is removed and upper portions of the first and second gate spacers are removed. The first and second gate spacers may be formed of different materials having different etch rates.
Claims21
A method of forming a semiconductor device, the method comprising:
- providing a substrate forming a gate stack and gate spacers adjacent the gate stack;
- forming a first dielectric layer over the substrate adjacent the gate spacers;
- removing the gate stack and upper portions of the gate spacers, thereby forming a funnel-shaped opening, the funnel-shaped opening exposing a semiconductor material of the substrate between the gate spacers;
- and forming a gate electrode in the funnel-shaped opening, wherein the funnel shaped opening comprises a funnel slope of about 30° to about 45° relative to a major surface of the substrate.
A method of forming a semiconductor device, the method comprising:
- providing a substrate, the substrate having a dummy gate stack formed thereon with one or more first dielectric layers along opposing sidewalls of the dummy gate stack;
- removing the dummy gate stack between the one or more first dielectric layers along opposing sidewalls of the dummy gate stack and at least a portion of the one or more first dielectric layers and exposing the substrate, thereby forming a funnel-shaped opening, wherein the funnel-shaped opening comprises forming a funnel slope of about 30° to about 45° relative to a major surface of the substrate;
- and forming a gate electrode in the funnel-shaped opening.
A method of forming a semiconductor device, the method comprising:
- providing a substrate;
- forming a gate stack on the substrate;
- forming a first dielectric layer on a first side of the gate stack and a second dielectric layer on a second side of the gate stack;
- removing the gate stack and upper portions of the first dielectric layer and the second dielectric layer, thereby forming a funnel-shaped opening between the first dielectric layer and the second dielectric layer and exposing the substrate;
- and forming a gate electrode in the funnel-shaped opening between the first dielectric layer and the second dielectric layer, wherein the funnel-shaped opening comprises a funnel slope of about 30° to about 45° relative to a major surface of the substrate.
Dependencies are inferred from the claim text.