Semiconductor switching device including charge storage structure

A semiconductor device, comprising:

• a first load terminal electrically connected to source zones of transistor cells, wherein the source zones form first pn junctions with body zones;
• a second load terminal electrically connected to a drain construction forming second pn junctions with the body zones;
• and
• control structures directly adjoining the body zones, the control structures comprising a control electrode and charge storage structures, the control electrode configured to control a load current through the body zones, the charge storage structures insulating the control electrode from the body zones and containing a control charge adapted to induce inversion channels in the body zones in the absence of a potential difference between the control electrode and the first load terminal,
• wherein the body zones are formed in semiconductor mesas formed from portions of a semiconductor body and separated from each other by the control structures.