Backside source-drain contact for integrated circuit transistor devices and method of making same
AssigneeSTMicroelectronics S.r.l.
InventorsWalter Kleemeier, John Hongguang Zhang
Life of this patent
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Abstract
An integrated circuit transistor is formed on and in a substrate. A trench in the substrate is at least partially filed with a metal material to form a source (or drain) contact buried in the substrate. The substrate further includes a source (or drain) region epitaxially grown above the source (or drain) contact. The substrate further includes a channel region adjacent to the source (or drain) region. A gate dielectric is provided on top of the channel region and a gate electrode is provided on top of the gate dielectric. The substrate is preferably of the silicon on insulator (SOI) type.
Claims23
A method, comprising:
- forming a trench in a substrate;
- at least partially filling said trench with a metal material to form a source contact buried in the substrate;
- epitaxially growing a source region over the source contact;
- epitaxially growing a channel region located adjacent the source region;
- providing a gate dielectric on top of the channel region;
- and
- forming a gate electrode on the gate dielectric.
A method, comprising:
- forming a trench extending into a substrate including an insulating layer and a semiconductor layer, wherein said trench extends through the semiconductor layer and at least partially into the insulating layer;
- partially filling the trench in the insulating layer with a metal material to form a source contact;
- epitaxially growing semiconductor material from said semiconductor layer to cover a top of the source contact with a source region;
- converting the semiconductor layer adjacent the source region to form a channel region;
- and
- forming an insulated gate electrode over the channel region.
A method, comprising:
- forming a trench in a substrate including an insulating layer and an overlying semiconductor layer, the substrate including a trench extending into the insulating layer;
- at least partially filling the trench in the insulating layer with a metal material to form a source contact;
- forming a source region made of semiconductor material adjacent the overlying semiconductor layer and lying on top of and in electrical contact with the source contact;
- forming a channel region from the overlying semiconductor layer adjacent the source region;
- and
- forming an insulated gate electrode over the channel region.
Dependencies are inferred from the claim text.