Group III nitride wafer and its production method
AssigneesSixPoint Materials, Inc., Seoul Semiconductor Co., Ltd.
InventorsTadao Hashimoto, Edward Letts, Sierra Hoff
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Abstract
The present invention discloses a group III nitride wafer such as GaN, AlN, InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from a bulk crystal of group III nitride with a mechanical method such as multiple wire saw, the wafer is chemically etched so that one surface of the wafer is visually distinguishable from the other surface. The present invention also discloses a method of producing such wafers.
Claims22
A group III nitride wafer having composition of GaxAlyIn1-x-yN (0≦x≦1, 0≦x+y≦1), wherein the wafer is formed by roughening both surfaces using a mechanical process and the surfaces are chemically treated to visually distinguish, without instrumentation, one surface from another after said roughening and before chemically-mechanically polishing the wafer.
A group III nitride wafer comprising a first layer and a second layer of damaged group III nitride on opposite faces of a third layer of highly oriented poly or single crystalline group III nitride, wherein the first and the second layer were formed through a mechanical process that precedes chemically-mechanically polishing the wafer, and the surface of the second layer is made visually distinguishable, without instrumentation, from the surface of the first layer by a chemical etching.
Dependencies are inferred from the claim text.