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US 9,543,392 B1Granted
Transparent group III metal nitride and method of manufacture
AssigneeSoraa, Inc.
InventorsWenkan Jiang, Dirk Ehrentraut, Mark P. D'Evelyn
Life of this patent
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Abstract
Large-area, low-cost single crystal transparent gallium-containing nitride crystals useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications are disclosed. The gallium-containing nitride crystals are formed by controlling impurity concentrations during ammonothermal growth and processing to control the relative concentrations of point defect species.
Claims22
A gallium-containing nitride crystal comprising:
- a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001)+c-plane and a (000-1)−c-plane;
- a substantially wurtzite structure;
- n-type electronic properties;
- an impurity concentration greater than about 2×1017 cm−3 of hydrogen;
- an impurity concentration less than about 1×1017 cm−3 of oxygen;
- an H/O ratio of at least 10;
- an impurity concentration greater than about 2×1014 cm−3 of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl;
- an optical absorption coefficient less than about 5 cm−1 at a wavelength of 400 nanometers;
- an optical absorption coefficient less than about 4 cm−1 at a wavelength of 410 nanometers;
- an optical absorption coefficient less than about 3 cm−1 at a wavelength of 415 nanometers;
- and
- an optical absorption coefficient less than about 2 cm−1 at a wavelength of 450 nanometers;
- wherein the gallium-containing nitride crystal is characterized by,
- an absorbance per unit thickness of at least 0.01 cm−1 at wavenumbers of 3218 cm−1, 3202 cm−1, and 3188 cm−1;
- and
- no infrared absorption peaks at wavenumbers between about 3175 cm−1 and about 3000 cm−1 having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3218 cm−1.
13 more elements
A gallium-containing nitride crystal comprising:
- a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001)+c-plane and a (000-1)−c-plane;
- a substantially wurtzite structure;
- n-type electronic properties;
- an impurity concentration greater than about 5×1017 cm−3 of hydrogen;
- an impurity concentration between about 2×1017 cm−3 and about 4×1018 cm−3 of oxygen;
- an H/O ratio of at least 0.3;
- an impurity concentration greater than about 1×1016 cm−3 of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl;
- an optical absorption coefficient less than about 8 cm−1 at a wavelength of 400 nanometers;
- an optical absorption coefficient less than about 6 cm−1 at a wavelength of 410 nanometers;
- an optical absorption coefficient less than about 5.5 cm−1 at a wavelength of 415 nanometers;
- an optical absorption coefficient less than about 4 cm−1 at a wavelength of 450 nanometers;
- an absorbance per unit thickness of at least 0.01 cm−1 at wavenumbers of approximately 3175 cm−1, 3164 cm−1, and 3150 cm−1;
- no infrared absorption peaks at wavenumbers between about 3200 cm−1 and about 3400 cm−1 or between about 3075 cm−1 and about 3125 cm−1 having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm−1.
10 more elements
A gallium-containing nitride crystal comprising:
- a top surface having a crystallographic orientation within about 5 degrees of a {1 0-1 0} m-plane;
- a substantially wurtzite structure;
- n-type electronic properties;
- an impurity concentration greater than about 3×1018 cm−3 of hydrogen;
- an impurity concentration between about 5×1017 cm−3 and about 3×1019 cm−3 of oxygen;
- an H/O ratio of at least 1.1;
- an impurity concentration greater than about 1×1016 cm−3 of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl;
- an optical absorption coefficient less than about 8 cm−1 at a wavelength of 400 nanometers;
- an optical absorption coefficient less than about 6 cm−1 at a wavelength of 410 nanometers;
- an optical absorption coefficient less than about 5.5 cm−1 at a wavelength of 415 nanometers;
- an optical absorption coefficient less than about 4 cm−1 at a wavelength of 450 nanometers;
- an absorbance per unit thickness of at least 0.01 cm−1 at 3188 cm−1, 3175 cm−1, 3164 cm−1, and 3150 cm−1;
- and
- no infrared absorption peaks at wavenumbers between about 3125 cm−1 and about 3000 cm−1, having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3188 cm−1.
11 more elements
Dependencies are inferred from the claim text.