Transistor having a heterojunction and manufacturing method thereof
AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorMieno Fumitake
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AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorMieno Fumitake
Estimating the term…
A transistor includes a semiconductor substrate comprising a first region and a second region. The transistor further includes an emitter and a base disposed on the first region, and a collector disposed on the second region. The emitter includes a heterojunction. The heterojunction is at a same height as a junction between two different insulating materials that separate the emitter and the base.
A transistor comprising:
A method of manufacturing a transistor, comprising:
A method of manufacturing a transistor, comprising:
Dependencies are inferred from the claim text.
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Being Group IV materials comprising two or more elements, e.g. SiGe: silicon carbide
Manufacture or treatment: of lateral BJTs
Bipolar junction transistors [BJT]: lateral BJTs
Emitter regions of BJTs: of lateral BJTs
About 8 years of term left · ends 14 Oct 2034 (estimated)
This application claims priority to Chinese Patent Application No. 201410073625.0 filed on Mar. 3, 2014, the disclosure of which is incorporated herein by reference in its entirety.
Technical Field
The present disclosure generally relates to a transistor and a manufacturing method thereof. More particularly, the present disclosure relates to a transistor having a wide bandgap emitter and a manufacturing method thereof.
The accompanying drawings, which are incorporated herein and constitute a part of the specification, illustrate different embodiments of the inventive concept and, together with the detailed description, serve to describe more clearly the inventive concept.
It is noted that in the accompanying drawings, for convenience of description, the dimensions of the components shown may not be drawn to scale. Also, same or similar reference numbers between different drawings represent the same or similar components.
FIG. 1 illustrates a schematic cross-sectional view of a conventional transistor structure in the prior art.
Various embodiments of the inventive concept are next described with reference to the accompanying drawings. It is noted that the following description of the different embodiments is merely illustrative in nature, and is not intended to limit the inventive concept, its application, or use. The relative arrangement of the components and steps, and the numerical expressions and the numerical values set forth in these embodiments do not limit the scope of the inventive concept unless otherwise specifically stated. In addition, techniques, methods, and devices as known by those skilled in the art, although omitted in some instances, are intended to be part of the specification where appropriate. It should be noted that for convenience of description, the sizes of the elements in the drawings may not be drawn to scale.
In the drawings, the sizes and/or relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals denote the same elements throughout.
It should be understood that the inventive concept is not limited to the embodiments described herein. Rather, the inventive concept may be modified in different ways to realize different embodiments.