Semiconductor device with recombination region
AssigneeInfineon Technologies AG
InventorsJohannes Georg Laven, Roman Baburske, Peter Kanschat
Life of this patent
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Abstract
A semiconductor device includes a drift zone in a semiconductor body. A charge-carrier transfer region forms a pn junction with the drift zone in the semiconductor body. A control structure electrically connects a recombination region to the drift zone during a desaturation cycle and disconnects the recombination region from the drift zone outside the desaturation cycle. During the desaturation cycle the recombination region reduces a charge carrier plasma in the drift zone and reduces reverse recovery losses without adversely affecting blocking characteristics.
Claims19
A semiconductor device, comprising:
- a drift zone in a semiconductor body;
- a charge-carrier transfer region forming a pn junction with the drift zone in the semiconductor body and directly electrically connected to a first load electrode;
- a recombination region;
- and
- a control structure comprising a connection region of a conductivity type of the drift zone, the connection region being electrically insulated from the first load electrode and directly adjoining the recombination region, wherein the control structure is configured to electrically connect the recombination region to the drift zone during a desaturation cycle and to disconnect the recombination region from the drift zone outside of the desaturation cycle.
An insulated gate bipolar transistor, comprising:
- a drift zone in a semiconductor body;
- a charge-carrier transfer region forming a pn junction with the drift zone in the semiconductor body and directly electrically connected to a first load electrode;
- a recombination region;
- and
- a control structure comprising a connection region of a conductivity type of the drift zone, the connection region being electrically insulated from the first load electrode and directly adjoining the recombination region, wherein the control structure is configured to electrically connect the recombination region to the drift zone during a desaturation cycle and to disconnect the recombination region from the drift zone outside of the desaturation cycle.
Dependencies are inferred from the claim text.