Semiconductor device with field electrode structures, gate structures and auxiliary diode structures

An electronic assembly, comprising:

• a semiconductor device comprising:
• field electrode structures extending in a direction vertical to a first surface in a semiconductor body;
• cell mesas formed from portions of the semiconductor body between the field electrode structures and including body zones forming first pn junctions with a drift zone;
• gate structures formed between the field electrode structures and configured to control a current flow through the body zones;
• and
• auxiliary diode structures with a forward voltage lower than the first pn junctions and electrically connected in parallel with the first pn junctions, wherein semiconducting portions of the auxiliary diode structures are formed in the cell mesas.