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US 9,543,385 B2Granted
Heavily doped semiconductor nanoparticles
AssigneesYissum Research Development Company of the Hebrew University of Jerusalem, Ramot at Tel-Aviv University Ltd.
InventorsGuy Cohen, Oded Millo, David Mocatta, Eran Rabani, Uri Banin
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Abstract
Herein, provided are heavily doped colloidal semiconductor nanocrystals and a process for introducing an impurity to semiconductor nanoparticles, providing control of band gap, Fermi energy and presence of charge carriers. The method is demonstrated using InAs colloidal nanocrystals, which are initially undoped, and are metal-doped (Cu, Ag, Au) by adding a metal salt solution.
Claims21
A nanoparticle comprising
- a semiconductor material, the semiconductor material being doped with at least two atoms of a dopant material, wherein
- the at least two atoms of the dopant material are heterovalent to atoms of the semiconductor material, said at least two atoms of the dopant material being dispersed within the semiconductor material, and
- the nanoparticle is free of dopant islands within the nanoparticle and free of dopant islands on the surface of the nanoparticle.
A method for manufacturing a doped semiconductor nanoparticle, said method comprising
- providing an undoped nanoparticle comprising a semiconductor material, and
- contacting said undoped nanoparticle with at least one doping material under conditions permitting dispersion of at least two atoms of said doping material within said semiconductor material to form a doped semiconductor nanoparticle that is doped with at least two atoms of a dopant material, wherein
- said at least two atoms of the dopant material are heterovalent to atoms of said semiconductor material, and
- the doped semiconductor nanoparticle is free of dopant islands within the doped semiconductor nanoparticle and free of dopant islands on the surface of the doped semiconductor nanoparticle.
1 more element
Dependencies are inferred from the claim text.