Semiconductor devices and fabrication methods thereof
AssigneeGlobalfoundries Inc.
InventorJagar Singh
Life of this patent
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Abstract
Semiconductor devices and fabrication methods thereof are provided. The semiconductor devices include: a substrate, the substrate including a p-type well adjoining an n-type well; a first p-type region and a first n-type region disposed within the n-type well of the substrate, where the first p-type region at least partially encircles the first n-type region; and a second p-type region and a second n-type region disposed in the p-type well of the substrate, where the second n-type region at least partially encircles the second p-type region. In one embodiment, the first p-type region fully encircles the first n-type region and the second n-type region fully encircles the second p-type region. In another embodiment, the semiconductor device may be a bipolar junction transistor or a rectifier.
Claims19
A structure comprising:
- a semiconductor device comprising a substrate, the substrate comprising a p-type well adjoining an n-type well, and the semiconductor device comprising:
- a first p-type region and a first n-type region disposed within the n-type well of the substrate, wherein the first p-type region at least partially encircles the first n-type region;
- and
- a second p-type region and a second n-type region disposed within the p-type well of the substrate, wherein the second n-type region at least partially encircles the second p- type region,
- wherein one of the p-type well or the n-type well of the substrate is located within the other of the p-type well or the n-type well of the substrate, and
- wherein a portion of the n-type well of the substrate extends between first p-type region and the first n-type region, and a portion of the p-type well of the substrate extends between the second p-type region and the second n-type region.
A method comprising:
- providing a semiconductor device comprising a substrate, the substrate comprising a p-type well adjoining an n-type well, and the providing comprising:
- fabricating a first p-type region and a first n-type region disposed within the n-type well of the substrate, and a second p-type region and a second n-type region disposed within the p-type well of the substrate, wherein the first p-type region at least partially encircles the first n-type region, and the second n-type region at least partially encircles the second p-type region,
- forming one well of the p-type well or the n-type well within the substrate;
- and
- forming the other well of the p-type well or the n-type well within the one well,
- wherein a portion of the n-type well of the substrate extends between first p-type region and the first n-type region, and a portion of the p-type well of the substrate extends between the second p-type region and the second n-type region.
Dependencies are inferred from the claim text.