Back to results
US 9,543,376 B2Granted
Semiconductor device and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsMasahiro Koike, Yuuichi Kamimuta, Tsutomu Tezuka
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a semiconductor device includes a semiconductor layer including Ge; and a metal Ge compound region provided in a surface portion of the semiconductor layer. Sn is included in an interface portion between the semiconductor layer and the metal Ge compound region. A lattice plane of the semiconductor layer matches with a lattice plane of the metal Ge compound region.
Claims11
A semiconductor device comprising:
- a semiconductor layer including Ge;
- and
- a metal Ge compound region provided in a surface portion of the semiconductor layer,
- wherein Sn is included in an interface portion between the semiconductor layer and the metal Ge compound region,
- a lattice plane of the semiconductor layer matches with a lattice plane of the metal Ge compound region, and
- the lattice plane of the semiconductor layer is a (01-1) plane and the lattice plane of the metal Ge compound region is a (121) plane.
3 more elements
A semiconductor device comprising:
- a first conductivity type semiconductor layer including Ge;
- first and second metal Ge compound regions, which are provided in a surface portion of the first conductivity type semiconductor layer and spaced apart from each other;
- and
- a gate electrode provided on a gate insulating film on a region interposed between the first and second metal Ge compound regions in the first conductivity type semiconductor layer,
- wherein
- Sn is included in interface portions between the first conductivity type semiconductor layer and each of the first and second metal Ge compound regions,
- a lattice plane of the first conductivity type semiconductor layer matches with a lattice plane of each of the first and second metal Ge compound regions, and
- the lattice plane of the first conductivity type semiconductor layer is a (01-1) plane and the lattice plane of each of the first and second metal Ge compound regions is a (121) plane.
5 more elements
Dependencies are inferred from the claim text.