Low temperature coefficient resistor in CMOS flow
AssigneeTexas Instruments Incorporated
InventorsGreg Charles Baldwin, Kamel Benaissa, Sarah Liu, Song Zhao
Life of this patent
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Abstract
A method for adding a low TCR resistor to a baseline CMOS manufacturing flow. A method of forming a low TCR resistor in a CMOS manufacturing flow. A method of forming an n-type and a p-type transistor with a low TCR resistor in a CMOS manufacturing flow.
Claims9
A method of operating a computer system to add a TCR resistor to a CMOS integrated circuit manufacturing flow comprising the steps of:
- retrieving said CMOS integrated circuit manufacturing flow;
- retrieving a TCR resistor program;
- inputting target resistance and TCR specification for said TCR resistor into said computer system;
- selecting a first implantation dose from said CMOS integrated circuit manufacturing flow to be implanted into a body of said TCR resistor;
- selecting at least a second implantation dose from said CMOS integrated circuit to be implanted into said body;
- adjusting said second implantation dose to generate an adjusted implant with an acceptable specification range dose;
- retrieving TCR vs. active doping data;
- retrieving TCR vs. carbon doping data;
- determining if a TCR of said TCR resistor meets said TCR specification with said first implantation dose and with said adjusted implant;
- using said TCR vs. carbon doping data to select a carbon dose to adjust said resistance of said TCR resistor to within said TCR specification;
- and
- adding said carbon dose to at least one of said first implantation dose and said adjusted implant;
- forming a TCR manufacturing flow for forming an integrated circuit with said TCR resistor using no additional masking steps where said body of said TCR resistor is implanted with said first implantation dose and with said adjusted implant;
- and
- storing said TCR manufacturing flow.
A method of creating a TCR manufacturing flow for fabricating an integrated circuit with a TCR resistor with no additional masking from a CMOS integrated circuit manufacturing flow steps, comprising the steps of:
- retrieving said CMOS integrated circuit manufacturing flow;
- retrieving a TCR resistor program;
- inputting target resistance and TCR specification for said TCR resistor into said computer system;
- selecting an NSD implant dose from said CMOS integrated circuit manufacturing flow to be implanted into a body of said TCR resistor;
- selecting a pre-gate etch n-type doping implant dose from said CMOS integrated circuit to be implanted into said body;
- adjusting said pre-gate etch n-type doping implant dose to generate an adjusted implant with an acceptable specification range dose;
- forming the TCR manufacturing flow for fabricating an integrated circuit with said TCR resistor where said body of said TCR resistor is implanted with said NSD implant dose and with said adjusted implant;
- and
- storing said TCR manufacturing flow.
Dependencies are inferred from the claim text.