Organic photoelectronic device including a PN junction and image sensor

An organic photoelectronic device, comprising:

• a first electrode and a second electrode facing each other;
• and
• an active layer between the first electrode and the second electrode, the active layer including a heterojunction of a p-type semiconductor and an n-type semiconductor, the p-type semiconductor including a compound represented by the following Chemical Formula 1, and the n-type semiconductor including a compound represented by the following Chemical Formula 2:
• wherein, in the Chemical Formula 1,
• X is one of oxygen (—O—) and sulfur (—S—),
• each of R1 to R11 are independently one of hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, and a combination thereof, and
• Y− is a halogen ion;
• wherein, in the Chemical Formula 2,
• each of R1 to R12 are independently one of hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen atom, a halogen-containing group, and a combination thereof, and
• X is an anion.