Switching device having a non-linear element
AssigneeCrossbar, Inc.
InventorsWei Lu, Sung Hyun Jo
Life of this patent
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Abstract
A switching device includes a substrate; a first electrode formed over the substrate; a second electrode formed over the first electrode; a switching medium disposed between the first and second electrode; and a nonlinear element disposed between the first and second electrodes and electrically coupled in series to the first electrode and the switching medium. The nonlinear element is configured to change from a first resistance state to a second resistance state on application of a voltage greater than a threshold.
Claims20
A method for a semiconductor device having a plurality of memory devices formed between intersections of a first plurality of electrodes and a second plurality of electrodes, the method comprising:
- applying a read threshold voltage across a first electrode from the first plurality of electrodes and a second electrode from the second plurality of electrodes, to thereby change a resistance state of a non-linear element in a first memory device that is coupled to the first electrode and the second electrode, from a high resistance state to a low resistance state, wherein the read threshold voltage is greater than a threshold voltage associated with the non-linear element, and wherein the read threshold voltage is less than a program threshold voltage associated with a first memory cell in the first memory device;
- applying a read voltage across the first electrode and the second electrode to thereby promote a first current flow through the first memory device, wherein the read voltage:
- is applied while the resistance state of the non-linear element is the low resistance state,
- is greater than a hold voltage associated with the non-linear element, and
- is less than the read threshold voltage;
- and
- determining a resistance state associated with the first memory cell of the first memory device in response to the first current flow.
A semiconductor device comprises
- a first plurality of electrodes;
- a second plurality of electrodes;
- a plurality of memory devices formed between intersections of the first plurality of electrodes and the second plurality of electrodes, wherein each of the plurality of memory devices comprises:
- a memory cell disposed adjacent to a first electrode of the first plurality of electrodes, wherein the memory cell has a resistance state that is associated with at least a high resistance state or a low resistance state, wherein the memory cell is associated with a program threshold voltage, and wherein the resistance state of the memory cell is configured to change from the high resistance state to the low resistance state upon application of a voltage higher than the program threshold voltage;
- and
- a non-linear element disposed adjacent to a second electrode of the second plurality of electrodes, wherein the non-linear element is associated with at least a high resistance state or a low resistance state, wherein the non-linear element is associated with a threshold voltage, wherein the resistance state of the non-linear element is configured to change from the high resistance state to the low resistance state upon application of a voltage higher than the threshold voltage, wherein the non-linear element is associated with a hold voltage, wherein the resistance state of the non-linear element is configured to be maintained in the low resistance state upon application of a voltage higher than the hold voltage, wherein the hold voltage is less than the threshold voltage, and wherein the threshold voltage is less than the program threshold voltage.
Dependencies are inferred from the claim text.