Electronic device and method for fabricating the same
AssigneeSK hynix Inc.
InventorJoong-Sik Kim
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Abstract
This technology provides an electronic device and a method of fabricating the same. An electronic device in accordance with an implementation of this document includes a transistor comprising a gate where at least a portion of the gate is filled in a semiconductor substrate including an active region defined by an isolation layer; a junction which is disposed over the active region at both side of the gate and includes a metal-containing layer and a first semiconductor layer doped with an impurity and interposed between the active region and the metal-containing layer; and a material layer which is interposed between the junction and the active region to prevent diffusion of the impurity from the first semiconductor layer and defines an opening for coupling the junction to the active region.
Claims20
An electronic device comprising a transistor, wherein the transistor comprises:
- a substrate including an active region and an isolation layer which defines the active region;
- a gate formed on the substrate to include at least a portion of the gate which is filled in the substrate;
- a junction which is disposed over the active region at both sides of the gate and includes a metal-containing layer and a first semiconductor layer doped with an impurity and interposed between the active region and the metal-containing layer;
- and
- a material layer which is interposed between the junction and the active region to prevent diffusion of the impurity from the first semiconductor layer and defines an opening for coupling the junction to the active region.
An electronic device comprising:
- a substrate having an active region defined by an isolation layer;
- a gate formed over the active region;
- junctions formed on the active region and at both sides of the gate, each junction including a stack structure including an impurity doped semiconductor pattern and a metal-containing layer, wherein the concentration of an impurity of the impurity doped semiconductor pattern changes a resistance of an interface between the substrate and the junctions;
- a diffusion barrier layer formed between the active region and the junctions to reduce diffusion of the impurity from the impurity doped semiconductor pattern, the diffusion barrier layer having a structure to apply a stress that increases mobility of charge carriers in a channel formed between the junctions.
Dependencies are inferred from the claim text.