Dark current reduction for back side illuminated image sensor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShou-Shu Lu, Hsun-Ying Huang, Hsin-Jung Huang, Chun-Mao Chiu, Chia-Chi Hsiao, Yung-Cheng Chang
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Abstract
A method of fabricating a semiconductor image sensor device is disclosed. A plurality of radiation-sensing regions is formed in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. An opening is formed in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The opening is then filled with an organic material.
Claims20
An apparatus comprising:
- a semiconductor image sensor device having a non-scribe-line region and a scribe-line region, the scribe-line region being a region that separates one semiconductor die from an adjacent semiconductor die, the semiconductor image sensor device including:
- a first substrate portion disposed in the non-scribe-line region, wherein the first substrate portion contains a doped radiation-sensing region;
- and
- a second substrate portion disposed in the scribe-line region, wherein the second substrate portion has the same material composition as the first substrate portion.
An apparatus comprising:
- a semiconductor image sensor device having a non-scribe-line region and a scribe-line region located adjacent to the non-scribe-line region, the semiconductor image sensor device including:
- a first semiconductor component located in the non-scribe-line region;
- a radiation-sensing element located in the first semiconductor component;
- and
- a second semiconductor component located in the scribe-line region, wherein the second semiconductor component is in direct physical contact with the radiation-sensing element, and wherein the second semiconductor component is free of having any radiation-sensing elements located therein.
An apparatus comprising:
- a semiconductor image sensor device having a first region and a second region located adjacent to the first region, the semiconductor image sensor device including:
- a first semiconductor substrate formed in the first region;
- a radiation-sensing element formed in the first semiconductor substrate, the radiation-sensing element being configured to sense radiation that enters the first semiconductor substrate through a back side;
- a second semiconductor substrate formed in the second region, the second semiconductor substrate being at least multiple times thinner than the first semiconductor substrate and having no radiation-sensing elements, the first and second semiconductor substrates having identical material compositions;
- and
- an organic material formed in the second region but not in the first region.
Dependencies are inferred from the claim text.