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US 9,543,350 B2Granted
Solid-state imaging device and camera including discrete trench isolation structure
AssigneeSony Corporation
InventorsKazuichiro Itonaga, Yu Oya
Life of this patent
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Abstract
A solid-state imaging device including is provided. The solid-state imaging device includes: pixels arrayed; a photoelectric conversion element in each of the pixels; a read transistor for reading electric charges photoelectrically-converted in the photoelectric conversion elements to a floating diffusion portion; a shallow trench element isolation region bordering the floating diffusion portion; and an impurity diffusion isolation region for other element isolation regions than the shallow trench element isolation region.
Claims24
An imaging device comprising:
- a plurality of photoelectric conversion elements including a first photoelectric conversion element and a second photoelectric conversion element;
- a floating diffusion portion;
- a first transfer transistor configured to transfer charges generated in the first photoelectric conversion element to the floating diffusion portion;
- an impurity diffusion isolation region formed between the first photoelectric conversion element and the second photoelectric conversion element;
- and
- a first discrete trench isolation structure, wherein
- the floating diffusion portion contacts a portion of the first discrete trench isolation structure,
- a gate electrode of the first transfer transistor covers a portion of the first discrete trench isolation structure, and
- the first discrete trench isolation structure is not in contact with the first photoelectric conversion element.
6 more elements
A camera device, comprising:
- an optical system;
- an imaging device including:
- a plurality of photoelectric conversion elements having a first photoelectric conversion element and a second photoelectric conversion element,
- a floating diffusion portion,
- a first transfer transistor configured to transfer charges generated in the first photoelectric conversion element to the floating diffusion portion,
- an impurity diffusion isolation region formed between the first photoelectric conversion element and the second photoelectric conversion element, and
- a first discrete trench isolation structure;
- and
- a signal processing circuit, wherein
- the floating diffusion portion contacts a portion of the first discrete trench isolation structure,
- a gate electrode of the first transfer transistor covers a portion of the first discrete trench isolation structure, and
- the first discrete trench isolation structure is not in contact with the first photoelectric conversion element.
9 more elements
Dependencies are inferred from the claim text.