Mechanisms for forming image sensor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsVolume Chien, Yun-Wei Cheng, Shiu-Ko Jangjian, Zhe-Ju Liu, Kuo-Cheng Lee, Chi-Cherng Jeng
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Abstract
Embodiments of mechanisms for forming an image sensor device are provided. The image sensor device includes a semiconductor substrate and a photodetector in the semiconductor substrate. The image sensor device also includes a dielectric layer over the semiconductor substrate, and the dielectric layer has a recess aligned with the photodetector. The image sensor device further includes a filter in the recess of the dielectric layer. In addition, the image sensor device includes a shielding layer between the dielectric layer and the semiconductor substrate and surrounding the filter.
Claims20
An image sensor device, comprising:
- a semiconductor substrate;
- a photodetector in the semiconductor substrate;
- a dielectric layer over the semiconductor substrate, wherein the dielectric layer has a recess aligned with the photodetector;
- a filter in the recess of the dielectric layer, wherein the filter has a protruding portion protruding from a bottom surface of the dielectric layer;
- a shielding layer between the dielectric layer and the semiconductor substrate and surrounding the filter, wherein the filter and the shielding layer overlap from a view facing a direction perpendicular to a normal direction of a top surface of the semiconductor substrate, and the shielding layer surrounds the protruding portion of the filter;
- and
- a reflective element directly below the shielding layer, wherein the shielding layer is thinner than the reflective element.
An image sensor device, comprising:
- a semiconductor substrate having a first pixel region and a second pixel region;
- a first photodetector and a second photodetector in the first pixel region and the second pixel region, respectively;
- a dielectric layer over the semiconductor substrate, wherein the dielectric layer has a first recess and a second recess aligned with the first photodetector and the second photodetector, respectively;
- a first filter and a second filter in the first recess and the second recess, respectively, wherein the first filter has a protruding portion protruding from a bottom surface of the dielectric layer;
- a shielding layer between the dielectric layer and the semiconductor substrate and surrounding the first filter and the second filter, wherein the first filter and the shielding layer overlap from a view facing a direction perpendicular to a normal direction of a top surface of the semiconductor substrate, and the shielding layer surrounds the protruding portion of the first filter;
- and
- a reflective element directly below the shielding layer, wherein the shielding layer is thinner than the reflective element.
An image sensor device, comprising:
- a semiconductor substrate;
- a photodetector in the semiconductor substrate;
- a filter over the semiconductor substrate and aligned with the photodetector;
- a dielectric layer over the semiconductor substrate and surrounding the filter;
- a shielding layer over the semiconductor substrate and surrounding a lower portion of the filter, wherein the lower portion of the filter protrudes from a bottom surface of the dielectric layer, and the shielding layer and the lower portion of the filter overlap from a view facing a direction perpendicular to a normal direction of a top surface of the semiconductor substrate;
- and
- a reflective element directly below the shielding layer, wherein the shielding layer is thinner than the reflective element.
Dependencies are inferred from the claim text.